Part Number Hot Search : 
124ML B1521RW HMC128G8 100MD6 TFA98 N431K H0025NL SS820
Product Description
Full Text Search
 

To Download S11MD4T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 S11MD4V/S11MD4T
S11MD4V/S11MD4T
s Features
1. Pin No. 5 completely molded for external noise resistance (S11MD4T ) 2. Dual-in-line package type (S11MD4V) 3. Built-in zero-cross circuit 4. High repetitive peak OFF-state voltage (VDRM : MIN. 400V ) 5. Isolation voltage between input and output Viso : 5 000Vrms ( S11MD4V/S11MD4T ) 6. Recognized by UL, file No.E64380 g S11MD4V and S11MD4T are for 100V lines.
Phototriac Coupler with Built-in Zero-cross Circuit
s Outline Dimensions
S11MD4V 2.54 0.25 6 5 4 6.5 0.5
( Unit : mm )
Internal connection diagram 6 5 4 Zero-cross circuit 1 2 3 1 2 3 4 Anode Cathode NC Anode/ Cathode 5 No external connection 6 Anode/ Cathode
S11MD4V
1 Anode mark
2
3 0.9 0.2 1.20.3
7.120.5 3.5 0.5
7.620.3
3.350.5
s Applications
1. For triggering medium/high power triacs
0.5TYP.
3.7 0.5
0.26 0.1 : 0 to 13
0.5 0.1
S11MD4T 6 S11MD4T 4 6.5 0.5
Internal connection diagram 6 4 Zero-cross circuit 1 2 3 1 2 3 4 Anode Cathode NC Anode/ Cathode 6 Anode/ Cathode
2 1 Anode mark 2.540.25 7.120.5
3 0.90.2 1.20.3
7.62 0.3 0.5TYP. 3.50.5
s Absolute Maximum Ratings
Parameter Forward current Reverse voltage RMS ON-state current 1 Peak one cycle Output surge current Repetitive peak OFF-state voltage *2 Isolation voltage Operating temperature Storage temperature 3 Soldering temperature Input Symbol IF VR IT Isurge VDRM Viso Topr Tstg Tsol
( Ta = 25C )
Rating Unit S11MD4V/S11MD4T 50 mA 6 V 0.1 1.2 400 5 000 - 30 to +100 - 55 to +125 260 Arms A V Vrms C C C
3.35 0.5
0.26 0.1 : 0 to 13
3.70.5
0.5 0.1
1 50Hz sine wave 2 40 to 60% RH, AC for 1 minute, f = 60Hz 3 For 10 seconds
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
S11MD4V/S11MD4T s Electro-optical Characteristics
Input Parameter Forward voltage Reverse current
Repetitive peak OFF-state current
( Ta = 25C)
Symbol VF IR I DRM VT IH dV/dt VOX IFT RISO t on Conditions IF = 20mA VR = 3V VDRM = Rated IT = 0.1A VD = 6V VDRM = 1/ 2 * Rated Resistance load, IF = 15mA VD = 6V. RL = 100 DC500V, 40 to 60% RH VD = 6V, RL = 100 , IF = 20mA MIN. 0.1 100 5 x 1010 TYP. 1.2 1.7 1.0 1011 20 MAX. 1.4 10-5 10-6 2.5 3.5 35 10 50 Unit V A A V mA V/ s V mA s
Output
ON-state voltage Holding current
Critical rate of rise of OFF-state voltage
Transfer characteristics
Zero-cross voltage Minimum trigger current Isolation resistance Turn-on time
Fig. 1 RMS ON-state Current vs. Ambient Temperature
RMS ON-state current IT (A rms)
Fig. 2 Forward Current vs. Ambient Temperature
70 60 Forward current I F (mA) 50 40 30 20 10
0.10
0.05
0 - 30
0 20 40 60 80 Ambient temperature T a (C)
100
0 -30
0
25 50 75 100 Ambient temperature Ta (C)
125
Fig. 3 Forward Current vs. Forward Voltage
200 100 Forward current I F (mA) 50 20 10
Fig. 4 Minimum Trigger Current vs. Ambient Temperature
14 12 10 8 6 4 2 0 -30 VD = 6V RL = 100
25C 0C - 30C
5 2 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0
Minimum trigger current I FT (mA)
T a = 100C 75C 50C
0 20 40 60 80 Ambient temperature T a ( C )
100
S11MD4V/S11MD4T
Fig. 5 Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature
1.3
Fig. 6 ON-state Voltage vs. Ambient Temperature
2.0 I T = 100mA
Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25C)
1.2 ON-state voltage VT ( V ) 0 20 40 60 80 Ambient temperature T a (C ) 100
1.9
1.1
1.8
1.0
1.7
0.9
1.6
0.8
1.5
0.7 -30
1.4 -30
0 20 40 60 80 Ambient temperature T a (C )
100
Fig. 7 Holding Current vs. Ambient Temperature
10 5 Holding current I H ( mA ) VD = 6V
Fig. 8 Repetitive Peak OFF-state Current vs. OFF-state Voltage
2
Repetitive peak OFF-state current I DRM ( A )
Ta = 25C 10
-7
2 1 0.5
5
2
0.2 0.1 - 30
10
-8
5
0 20 40 60 80 Ambient temperature T a (C)
100
100
200
300 400 500 OFF-state voltage V D ( V )
600
Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature
10 Repetitive peak OFF-state current I DRM ( A )
-5
Fig.10 Zero-cross Voltage vs. Ambient Temperature
R load I F = 15mA Zero-cross voltage VOX ( V ) 25
5 2
V DRM = 400V
10
-6
5 2
10
-7
5 2
20
10
-8
5 2
10
-9
5
- 30
0 20 40 60 80 Ambient temperature T a (C)
100
15 -30
0 20 40 60 80 Ambient temperature T a ( C )
100
S11MD4V/S11MD4T
Fig.11 ON-state Current vs. ON-state Voltage
100 90 ON-state current IT ( mA ) 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage VT ( V ) I F = 20mA T a = 25C
s Basic Operation Circuit
Medium/High Power Triac Drive Circuit
+ VCC
1
6
Load
2 VIN Zerocross circuit 4 AC100V
3
Note) Please use on condition of the triac for power triggers.
q
Please refer to the chapter "Precautions for Use."


▲Up To Search▲   

 
Price & Availability of S11MD4T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X